D444 Mosfet



Aod444 d444 n-channel mosfet AOD444 General description: The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications. D444: N-Channel MOSFET uses advanced trench technology SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  1. Persamaan Mosfet D444
  2. Harga Mosfet D444
  3. Transistor Mosfet D444

2SJ484 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SJ484

Маркировка: WY

Тип транзистора: MOSFET

  1. Jual Mosfet AOD444 D444 dengan harga Rp35.000 dari toko online Atlantis Digital Inc, Kota Surabaya. Cari produk Lainnya lainnya di Tokopedia. Jual beli online aman dan nyaman hanya di Tokopedia.
  2. The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications. Parameter Maximum Units Absolute Maximum Ratings T A=25°C unless otherwise noted 60V Avalanche energy L=0.1mH C mJ Avalanche Current C 3.

Полярность: P

Максимальная рассеиваемая мощность (Pd): 1 W

Предельно допустимое напряжение сток-исток |Uds|: 30 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Максимально допустимый постоянный ток стока |Id|: 2 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 30 ns

Выходная емкость (Cd): 140 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.23 Ohm

Тип корпуса: UPAK

2SJ484 Datasheet (PDF)

0.1. 2sj484.pdf Size:79K _renesas

Pengganti mosfet d444

2SJ484 Silicon P Channel MOS FET REJ03G0868-0300 (Previous: ADE-208-501A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.18 typ. (at VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-AR(Package name: UPAK )

0.2. rej03g0868 2sj484ds.pdf Size:92K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.1. 2sj483.pdf Size:47K _1

2SJ483Silicon P Channel MOS FETHigh Speed Power SwitchingADE-208-5191st. EditionFeatures Low on-resistanceRDS(on) = 0.08 typ (at VGS = 10 V, ID = 2.5 A) 4V gate drive devices. Large current capacitanceID = 5 AOutlineTO-92MOD.DG1. Source322. Drain13. GateS2SJ483Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDra

9.2. 2sj485.pdf Size:43K _sanyo

Ordering number:ENN6434P-Channel Silicon MOSFET2SJ485Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 4V drive.[2SJ485]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ485]6.5 2.35.0 0.540.5

9.3. 2sj486.pdf Size:79K _renesas

2SJ486 Silicon P Channel MOS FET REJ03G0869-0300 (Previous: ADE-208-512A) Rev.3.00 Sep 07, 2005 Description Low frequency power switching Features Low on-resistance RDS (on) = 0.5 typ. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive devices. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)D31. SourceG

9.4. 2sj48 2sj49 2sj50.pdf Size:192K _hitachi

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

Другие MOSFET... 2SJ45, 2SJ460, 2SJ461, 2SJ462, 2SJ463, 2SJ471, 2SJ479, 2SJ483, IRFBC40, 2SJ486, 2SJ496, 2SJ504, 2SJ505, 2SJ506, 2SJ517, 2SJ518, 2SJ526.




Список транзисторов

Обновления

MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02Mosfet


Número de Parte: AOD4454

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente |Vds|: 150 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 20 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4.6 V

Tiempo de elevación (tr): 5.5 nS

Conductancia de drenaje-sustrato (Cd): 70 pF

Resistencia drenaje-fuente RDS(on): 0.094 Ohm

Empaquetado / Estuche: TO-252


AOD4454 Datasheet (PDF)

0.1. aod4454.pdf Size:291K _aosemi

AOD4454150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOD4454 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 20Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

0.2. aod4454.pdf Size:266K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOD4454FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSStatic Drain-Source On-Resistance: R =94m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.1. aod446.pdf Size:193K _aosemi

AOD446N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesVDS (V) = 75VThe AOD446 uses advanced trench technology andID = 10 A (VGS = 20V)design to provide excellent RDS(ON) with low gateRDS(ON)

9.2. aod442 aoi442.pdf Size:246K _aosemi

AOD442/AOI44260V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD442/AOI442 used advanced trench technology to 60V37Aprovide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V)devices are suitable for use as a load switch or in PWM

9.3. aod448.pdf Size:193K _aosemi

AOD448N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD448 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gateID = 75A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)

9.4. aod442.pdf Size:246K _aosemi

AOD442/AOI44260V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD442/AOI442 used advanced trench technology to 60V37Aprovide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V)devices are suitable for use as a load switch or in PWM

9.5. aod442g.pdf Size:349K _aosemi

AOD442G60V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 40A Logic Level Driving RDS(ON) (at VGS=10V)

Persamaan Mosfet D444

9.6. aod444 aoi444.pdf Size:248K _aosemi

AOD444/AOI44460V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD444/AOI444 combine advanced trench MOSFET 60V12Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). Those devices are suitable for use

9.7. aod444.pdf Size:248K _aosemi

AOD444/AOI44460V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD444/AOI444 combine advanced trench MOSFET 60V12Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). Those devices are suitable for use

Harga Mosfet D444

9.8. aod444.pdf Size:1741K _kexin

SMD Type MOSFETN-Channel MOSFETAOD444 (KOD444)TO-252Unit: mm+0.15 Features6.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) 60m (VGS = 10V)D0.127 RDS(ON) 85m (VGS = 4.5V)+0.10.80-0.1max+ 0.12.3 0.60- 0.1+0.154.60 -0.15GS Absolute Maximum Ratings Ta = 25Parame

9.9. aod446.pdf Size:265K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOD446FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.10. aod442.pdf Size:249K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOD442FEATURESDrain Current I = 37A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral

9.11. aod442g.pdf Size:249K _inchange_semiconductor

Transistor Mosfet D444

isc N-Channel MOSFET Transistor AOD442GFEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

9.12. aod444.pdf Size:265K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOD444FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... AOD421, AOD422, AOD423, AOD424, AOD425, AOD4286, AOD442, AOD444, IRF150, AOD446, AOD450, AOD4504, AOD454A, AOD456, AOD458, AOD464, AOD468.




Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02